1 . 3 l m quantum dot vertical - cavity surface - emitting laser with external light injection
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چکیده
Introduction: Quantum dots are attractive quantum structures owing to their superior characteristics and broad applications. A semiconductor laser with a quantum dot active region has been proven to exhibit excellent characteristics, including high differential gain, high modulation bandwidth, low threshold currents, and temperature insensitive threshold current density [1]. Quantum dot vertical-cavity surface-emitting lasers (QD VCSELs) have been the focus of a great deal of research in recent years [2, 3]. The advantages of VCSELs, such as low power consumption, high beam quality, and low-cost production capability, have led to important application in optical communications. Therefore, enhancing the frequency response of QD VCSELs to increase the data rates is very important. Recently, the light injection technique has been shown to be effective for enhancing the frequency response of semiconductor lasers [4]. However, QD VCSELs with external light injection have not yet been addressed. In this Letter we report the experimental characterisation of a 1.3 mm QD VCSEL with and without external light injection. Significant frequency response enhancement has been observed. The 3 dB frequency response has been increased by as much as 4.2 times using the light injection technique.
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تاریخ انتشار 2000